Metal-semiconductor 1T/2H-MoS2 by a heteroatom-doping strategy for enhanced electrocatalytic hydrogen evolution

Complicated synthesis procedure and instability of 1T-MoS2 impede its practical application for hydrogen evolution reaction. Here, we propose a new strategy to drive the synthesis of stabilized 1T-MoS2 by Ni doping. Ni doping forms the NiS covalent bonds, inducing the slip of S atoms and stabilizing 1T structure. The materials were characterized by transmission electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. Electrochemical tests including linear sweep voltammetry etc. indicate that the 1T/2H-MoS2/8%Ni has an overpotential of 162 mV and a Tafel slope of 80 mV dec−1 along with a good stability. [Display omitted] •Metal-semiconductor 1T/2H-MoS2 is synthesized by the doping of Ni.•The 1T/2H-MoS2/8%Ni shows superior activity and good stability during acidic HER.•The mixed phases of 1T- and 2H-MoS2 contribute to enhanced electrocatalytic activity.