Single-Event Latchup in a 7-nm Bulk FinFET Technology
Terrestrial neutron and alpha particle irradiation data for a 7-nm bulk FinFET technology reveal the persisting reliability threat single-event latchup (SEL) poses to advanced technology nodes. SEL is characterized over a wide range of supply voltages and temperatures for this technology node. SEL d...
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Veröffentlicht in: | IEEE transactions on nuclear science 2021-05, Vol.68 (5), p.830-834 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Terrestrial neutron and alpha particle irradiation data for a 7-nm bulk FinFET technology reveal the persisting reliability threat single-event latchup (SEL) poses to advanced technology nodes. SEL is characterized over a wide range of supply voltages and temperatures for this technology node. SEL data is analyzed to determine the holding voltage ( V_{\mathrm {HOLD}} ) required to sustain SEL, which can be as low as 0.85 V at elevated temperatures. Such low SEL holding voltage within 100 mV of nominal supply voltage poses a major reliability threat. |
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ISSN: | 0018-9499 1558-1578 |
DOI: | 10.1109/TNS.2021.3049736 |