Single-Event Latchup in a 7-nm Bulk FinFET Technology

Terrestrial neutron and alpha particle irradiation data for a 7-nm bulk FinFET technology reveal the persisting reliability threat single-event latchup (SEL) poses to advanced technology nodes. SEL is characterized over a wide range of supply voltages and temperatures for this technology node. SEL d...

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Veröffentlicht in:IEEE transactions on nuclear science 2021-05, Vol.68 (5), p.830-834
Hauptverfasser: Ball, D. R., Sheets, C. B., Xu, L., Cao, J., Wen, S.-J., Fung, R., Cazzaniga, C., Kauppila, J. S., Massengill, L. W., Bhuva, B. L.
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Sprache:eng
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Zusammenfassung:Terrestrial neutron and alpha particle irradiation data for a 7-nm bulk FinFET technology reveal the persisting reliability threat single-event latchup (SEL) poses to advanced technology nodes. SEL is characterized over a wide range of supply voltages and temperatures for this technology node. SEL data is analyzed to determine the holding voltage ( V_{\mathrm {HOLD}} ) required to sustain SEL, which can be as low as 0.85 V at elevated temperatures. Such low SEL holding voltage within 100 mV of nominal supply voltage poses a major reliability threat.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2021.3049736