Hydrogen spillover effect induced by ascorbic acid in CdS/NiO core-shell p-n heterojunction for significantly enhanced photocatalytic H-2 evolution

A new variety of CdS/NiO core-shell p-n heterojunction is synthesized by in-situ chemically depositing NiO shell on single-crystal CdS nanorods for the first time. With this method, the range of NiO shell thickness can be accurately controlled within a few nanometers. The optimized CdS/NiO sample (C...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of colloid and interface science 2021-08, Vol.596, p.215-224
Hauptverfasser: Sun, Guotai, Xiao, Bing, Shi, Jian-Wen, Mao, Siman, He, Chi, Ma, Dandan, Cheng, Yonghong
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A new variety of CdS/NiO core-shell p-n heterojunction is synthesized by in-situ chemically depositing NiO shell on single-crystal CdS nanorods for the first time. With this method, the range of NiO shell thickness can be accurately controlled within a few nanometers. The optimized CdS/NiO sample (CSN0.5) with a NiO shell layer of 1.5 nm exhibits a highly efficient photocatalytic H-2 evolution rate of 731.7 lmol/h (corresponding to 243.9 mmol/g/h) without using co-catalyst, which is among the highest value of all the CdS-based photocatalysts. The apparent quantum efficiency (AQE) of CSN0.5 at 365 nm wavelength reaches 28.19%. The remarkably enhanced photocatalytic performance can be attributed to a hydrogen spillover effect induced by ascorbic acid in CdS/NiO, which promotes the transmission of adsorbed H* from hydrogen-rich NiO (electron-poor region) to hydrogen-poor CdS (electron-rich region) where the adsorbed H* reacts in time with the photogenerated electron to produce H-2, facilitating the H-2 evolution reaction. This work provides a method to promote the photocatalytic H-2 evolution reaction by using hydrogen spillover effect. (C) 2021 Elsevier Inc. All rights reserved.
ISSN:0021-9797
1095-7103
DOI:10.1016/j.jcis.2021.03.150