Influence of high pressure on the temperature dependence of electrical resistivity of Y1-xPrxBa2Cu3O7-δ single crystals

The effect of hydrostatic pressure up to 12 kbar on electrical resistance in the basal ab-plane of optimally oxygen-doped Y1–xPrxBa2Cu3O7–δ single crystals doped with praseodymium (х≈0.23) has been investigated. It was determined that the introduction of praseodymium leads to a fivefold increase in...

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Veröffentlicht in:Solid state communications 2021-03, Vol.327, p.114205, Article 114205
Hauptverfasser: Khadzhaj, G. Ya, Matsepulin, A.V., Chroneos, A., Goulatis, Ι.L., Vovk, R.V.
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Sprache:eng
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Zusammenfassung:The effect of hydrostatic pressure up to 12 kbar on electrical resistance in the basal ab-plane of optimally oxygen-doped Y1–xPrxBa2Cu3O7–δ single crystals doped with praseodymium (х≈0.23) has been investigated. It was determined that the introduction of praseodymium leads to a fivefold increase in the baric derivative dTc/dP at zero pressure; however, as the pressure rises, dTc/dP decreases to a level characteristic of undoped Y1–xPrxBa2Cu3O7–δ samples with an optimal oxygen content. •hydrostatic pressure does not affect the morphology of a superconducting cluster in Y1-xPrxBa2Cu3O7-δ.•Pr leads to a fivefold increase in the baric derivative dTc/dP at zero pressure.•As pressure rises, dTc/dP decreases to a level characteristic of undoped Y1–xPrxBa2Cu3O7–δ.
ISSN:0038-1098
1879-2766
DOI:10.1016/j.ssc.2021.114205