Oxidizable electrode induced bipolar resistive switching behavior in TE/CdZnTe/Pt structure

TE/CdZnTe/Pt/Ti/SiO 2 /Si structures (top electrode TE = Au, Pt, Al, Ti and Cu) were fabricated by magnetron sputtering and thermal evaporation. Bipolar resistive switching behavior was observed in TE/CdZnTe/Pt/Ti/SiO 2 /Si structure when TE is Al, Ti or Cu, but Pt or Au as TE in TE/CdZnTe/Pt device showed no resistive switching. The interfacial layer-dominated model was proposed to explain the presence of resistive switching behavior in TE/CdZnTe/Pt device due to oxidizable electrodes. The role of the CdZnTe film is a series resistor after the forming process. Space charge-limited current model was used to analyze the conduction mechanism and ~ 10 19 cm −3 trap density in the interfacial layer was calculated by fitting the current–voltage curve. The device properties including voltage parameter distribution, retention property and endurance property were tested, respectively. The Al/CdZnTe/Pt/Ti/SiO 2 /Si structure has a good potential as resistive switching random access memory with over 10 3 ON/OFF ratio and at least 10 3 s retention time.