Atomic‐Layer‐Deposition‐Based 2D Transition Metal Chalcogenides: Synthesis, Modulation, and Applications

Transition metal chalcogenides (TMCs) are a large family of 2D materials with different properties, and are promising candidates for a wide range of applications such as nanoelectronics, sensors, energy conversion, and energy storage. In the research of new materials, the development and investigati...

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Veröffentlicht in:Advanced materials (Weinheim) 2021-11, Vol.33 (47), p.e2005907-n/a, Article 2005907
Hauptverfasser: Kim, Youngjun, Woo, Whang Je, Kim, Donghyun, Lee, Sangyoon, Chung, Seung‐min, Park, Jusang, Kim, Hyungjun
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Sprache:eng
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Zusammenfassung:Transition metal chalcogenides (TMCs) are a large family of 2D materials with different properties, and are promising candidates for a wide range of applications such as nanoelectronics, sensors, energy conversion, and energy storage. In the research of new materials, the development and investigation of industry‐compatible synthesis techniques is of key importance. In this respect, it is important to study 2D TMC materials synthesized by the atomic layer deposition (ALD) technique, which is widely applied in industries. In addition to the synthesis of 2D TMCs, ALD is used to modulate the characteristic of 2D TMCs such as their carrier density and morphology. So far, the improvement of thin film uniformity without oxidation and the synthesis of low‐dimensional nanomaterials on 2D TMCs have been the research focus. Herein, the synthesis and modulation of 2D TMCs by ALD is described, and the characteristics of ALD‐based TMCs used in nanoelectronics, sensors, and energy applications are discussed. An overview of the synthesis of 2D transition metal chalcogenides (TMCs) by atomic layer deposition (ALD) is presented. While the ALD of thin films on 2D TMCs can modify the TMC properties, that of low‐dimensional nanomaterials on 2D TMCs can enhance the device performance. The characteristics of ALD‐based TMCs applied to nanoelectronics, sensors, and energy applications are discussed.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.202005907