Sm-doped SnO2 nanoparticles synthesized via solvothermal method as a high-performance formaldehyde sensing material for gas sensors
Formaldehyde (HCHO) is a colorless and irritating volatile organic compound, which has been proven to be one of the raw materials that cause pathological building syndrome, as well as a major source of indoor environmental pollution. Long-term exposure of human body to formaldehyde will cause certai...
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Veröffentlicht in: | Journal of materials science. Materials in electronics 2021-04, Vol.32 (7), p.8249-8264 |
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Sprache: | eng |
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Zusammenfassung: | Formaldehyde (HCHO) is a colorless and irritating volatile organic compound, which has been proven to be one of the raw materials that cause pathological building syndrome, as well as a major source of indoor environmental pollution. Long-term exposure of human body to formaldehyde will cause certain health risks, so it is of great practical significance to develop a fast and effective formaldehyde detection sensor. Tin dioxide (SnO
2
), an n-type semiconductor metal oxide with a specific bandgap (3.62 eV, at 300 K), has been widely used as efficient sensors material for hazardous gases detecting. Different ratios of Sm-doped SnO
2
nanoparticles had been successfully prepared by a simple solvothermal route and used as sensing materials in this work. The sample structure, micromorphology, and ingredient were characterized by XRD, SEM, TEM, XPS, and other methods of formaldehyde gas-sensing characteristics were studied. The results shown the optimum compound ratio of Sm-doped SnO
2
nanoparticles was 5.0 mol%, the optimal operating temperature was 160 °C, and the sensor shown high gas response, reliable stability and selectivity to formaldehyde. The sensor shown the outstanding gas-sensing performances to formaldehyde ascribed the average grain size of the Sm-doped SnO
2
nanoparticles and the positive role of Sm. Besides, the possible gas-sensing mechanism of the prepared sensor to formaldehyde was analyzed in detail. |
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ISSN: | 0957-4522 1573-482X |
DOI: | 10.1007/s10854-020-05216-3 |