Photoinduced Synaptic Behavior of InxTiyO Thin Film Transistors

Herein, InxTiyO films are successfully deposited via the atomic layer deposition method, which involves sub‐cycles of In2O3 and TiO2 application at a growth temperature of 200 °C. InxTiyO films are an excellent alternative to In2O3 films for use in channels of thin film transistors (TFTs), and can be used to avoid issues such as metal‐like conduction characteristics and undesirable negative shifts. Adjusting the addition of TiO2 to In2O3 enables modulation of the cut‐off wavelength in the UV region. However, the addition of TiO2 adversely affects the on‐current level. The TiO2 content in the InxTiyO films is optimized based on photosensitivity and current level, wherein the films are used as the channel layer in photo‐TFTs; consequently, a photo‐synaptic behavior is achieved. The InxTiyO film‐based memory devices are programmed and erased using UV light and gate voltage, respectively, wherein deep trap sites at the interface between the InTiO and Al2O3 layers facilitate the retention of charge during memory operation. The memory on/off ratio deteriorates slightly with a lapse in retention time of 4 × 104 s after 20 program/erase (P/E) cycles. Moreover, in the InxTiyO‐based TFTs, excellent linearity is achieved during potentiation due to a good photo‐synaptic behavior. InxTiyO films with various Ti content are grown by atomic layer deposition using the sub‐cycles of In2O3 and TiO2. The InTiO (4,1) films show the best transistor performance, indicating they can be an excellent alternative to In2O3 films. Additionally, InxTiyO‐based TFTs shows a good photo‐synaptic behavior with excellent linearity for different 50 multi‐states and good retention properties.