Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors With Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V

In this work, we demonstrate scaled back-end-of-line (BEOL) compatible indium oxide (In 2 O 3 ) transistors by atomic layer deposition (ALD) with channel thickness (T ch ) of 1.0-1.5 nm, channel length (L ch ) down to 40 nm, and equivalent oxide thickness (EOT) of 2.1 nm, with record high drain current of 2.0 A/mm at V DS of 0.7 V among all oxide semiconductors. Enhancement-mode In 2 O 3 transistors with I D over 1.0 A/mm at V DS of 1 V are also achieved by controlling the channel thickness down to 1.0 nm at atomic layer scale. Such high current density in a relatively low mobility amorphous oxide semiconductor is understood by the formation of high density 2D channel beyond 4\times 10^{13} /cm 2 at HfO 2 /In 2 O 3 oxide/oxide interface.