CMOS-Compatible Fabrication of Low-Power Ferroelectric Tunnel Junction for Neural Network Applications

A low-cost fabrication process of Hf 1-x Zr x O 2 (HZO) nonvolatile memory (NVM) was proposed and its characteristics were investigated. We successfully fabricated a ferroelectric tunnel junction (FTJ) device with tunable conductance for neural network applications. The proposed FTJ device exhibits...

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Veröffentlicht in:	IEEE transactions on electron devices 2021-02, Vol.68 (2), p.879-884
Hauptverfasser:	Kuo, Yi-Shan, Lee, Shen-Yang, Lee, Chia-Chin, Li, Shou-Wei, Chao, Tien-Sheng
Format:	Artikel
Sprache:	eng
Schlagworte:	CMOS Conductance switching Electrodes Engineering Engineering, Electrical & Electronic Ferroelectric materials ferroelectric tunnel junction Ferroelectricity Junctions large ON/OFF ratio low power consumption Magnetic field induced strain Neural networks Nonvolatile memory nonvolatile memory (NVM) Physical Sciences Physics Physics, Applied Power consumption Power management Resistance Science & Technology Switches synaptic device Technology Tin Tunnel junctions Tunneling tunneling electroresistance (TER) Zirconium
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Beschreibung
Zusammenfassung:	A low-cost fabrication process of Hf 1-x Zr x O 2 (HZO) nonvolatile memory (NVM) was proposed and its characteristics were investigated. We successfully fabricated a ferroelectric tunnel junction (FTJ) device with tunable conductance for neural network applications. The proposed FTJ device exhibits excellent performances, such as large conductance ratio of ~40 for a 500-ns pulse and thus satisfied low-power consumption of write pulse (1 fJ per bit) and fast write speed (
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2020.3045955