Recrystallization Behavior of a Pure Cu Connection Interface with Ultrasonic Welding

Three-dimensional metal waveguide components are key components in the next generation of radio telescopes. Ultrasonic additive manufacturing technology combining ultrasonic welding and micro electrical discharge machining (micro-EDM) provides a new method for the overall manufacturing of waveguide elements, and the effective welding of Electrolytic Tough Pitch copper (Cu-ETP) sheets is the key process of this method. This study demonstrates that the orthogonal test optimization method is used to conduct ultrasonic welding tests on Cu-ETP. Specifically, electron backscattered diffraction (EBSD) technology is used to analyze the crystal grains, grain boundary types and texture changes during interface recrystallization. In addition, the finite element software ABAQUS 6.13 is employed to calculate the temperature field in order to determine the possibility of recrystallization of the welding interface. The results showed that the average grain size of the welding interface decreased from 20 to 1 similar to 2 mu m. The Cu-ETP matrix is mainly composed of coarse grains with high-angle grain boundaries (HAGBs), while a large number of low-angle grain boundaries (LAGBs), subcrystals and fine equiaxed grains appear in the welded joint. At the same time, discontinuous dynamic recrystallization (DDRX) occurs in the less strained area, and continuous dynamic recrystallization (CDRX) is predominant in the greater strain area. The temperature field calculation shows that the peak temperature of the welding interface exceeds the recrystallization temperature of Cu-ETP from 379.05 to 433.2 degrees C.