Improved Resistive Switching of SnO2 Based Resistive Random Access Memory Devices Using Post Microwave Treatment

In this work, we reported improved resistive switching (RS) of SnO 2 -based resistive random access memory (RRAM) devices according to the post microwave treatment (MWT), working pressures (WP), and the electrode. As a result, as the deposition pressure increased, the operational current of all the...

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Veröffentlicht in:Journal of electrical engineering & technology 2021, 16(2), , pp.1011-1017
Hauptverfasser: Yun, Min Ju, Kim, Kyeong Heon, Bea, Dongju, Jung, Jinsu, Kim, Sungjun, Kim, Hee-Dong
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Sprache:eng
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Zusammenfassung:In this work, we reported improved resistive switching (RS) of SnO 2 -based resistive random access memory (RRAM) devices according to the post microwave treatment (MWT), working pressures (WP), and the electrode. As a result, as the deposition pressure increased, the operational current of all the devices became commonly lower, and when comparing SnO 2 RRAM devices, the optimal RS characteristics are obtained from the sample with Ag top-electrode deposited at WP of 10 mTorr and after the MWT process. The filament was also investigated, for the sample deposited at 5 mTorr, the diameter of the filament was wider in both the high resistive state and the low resistive state as a result of increasing the number of cycles. As a result, the larger the diameter of the filament, the longer the time for the filament formation and rupture was found.
ISSN:1975-0102
2093-7423
DOI:10.1007/s42835-020-00633-0