Improved Resistive Switching of SnO2 Based Resistive Random Access Memory Devices Using Post Microwave Treatment
In this work, we reported improved resistive switching (RS) of SnO 2 -based resistive random access memory (RRAM) devices according to the post microwave treatment (MWT), working pressures (WP), and the electrode. As a result, as the deposition pressure increased, the operational current of all the...
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Veröffentlicht in: | Journal of electrical engineering & technology 2021, 16(2), , pp.1011-1017 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In this work, we reported improved resistive switching (RS) of SnO
2
-based resistive random access memory (RRAM) devices according to the post microwave treatment (MWT), working pressures (WP), and the electrode. As a result, as the deposition pressure increased, the operational current of all the devices became commonly lower, and when comparing SnO
2
RRAM devices, the optimal RS characteristics are obtained from the sample with Ag top-electrode deposited at WP of 10 mTorr and after the MWT process. The filament was also investigated, for the sample deposited at 5 mTorr, the diameter of the filament was wider in both the high resistive state and the low resistive state as a result of increasing the number of cycles. As a result, the larger the diameter of the filament, the longer the time for the filament formation and rupture was found. |
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ISSN: | 1975-0102 2093-7423 |
DOI: | 10.1007/s42835-020-00633-0 |