Poly(3,4-ethylenedioxythiophene): Poly(styrenesulfonate) coated three layer graphene-graphene oxide heterostructure for UV and IR detection

[Display omitted] •Fabrication of three layer graphene-GO heterostructure by high power laser pulse.•Ultra-high EQE exceeding 100%, Rλ and Dλ in the order of 102 AW−1 and 1010 Jones for PEDOT:PSS/LRG films.•Mid-gap state band in LRG delayed the charge carrier recombination. The present work emphasizes on the use of laser assisted reduction for the fabrication of freestanding three-layer graphene (3LG)-graphene oxide heterostructure (LRG). PEDOT:PSS due to its high spectral responsivity and electron blocking nature was deposited over LRG for better photon absorption, exciton generation and prevention of electron-hole recombination. Powder XRD and micro-Raman studies revealed the successful formation of LRG and PEDOT:PSS/LRG heterostructure. A superior photoresponse characteristics with an ultra-high gain exceeding 100%, responsivity and detectivity in the order of 102 AW−1 and 1010 Jones, respectively was observed under ultraviolet (365 nm) illumination for PEDOT:PSS/LRG. The superior performance was owed to the inhibition of charge carrier recombination by mid-gap state band in LRG. The fabricated films have a promising future in opto-electronic industry, sensing and environmental monitoring purposes.