Solution-based spin cast-processed O-shaped memory devices

We have studied the current transport mechanism by investigating the hysteresis behavior of current–voltage characteristics obtained by solution-processed spin casting O-shaped memory devices made up with hybrid organic/inorganic nanocomposites of polyaniline–zinc oxide (PANI–ZnO) onto the indium tin oxide (ITO)-coated glass. The nanocomposites are characterized by Raman spectroscopy, FTIR, XRD, FE-SEM, and HR-TEM. The electrical characterization of the nanocomposites showed distinct I – V characteristics with large hysteresis. A hysteresis-type I – V characteristic represents O-shaped memory. The performance of hysteresis behavior remained constant, even after fifty operation cycles. Based on our investigation analysis, a chance of charge transport mechanism occurs, and our data analysis shows that a charge carrier transport mechanism occurs. A normalized differential conductance (NDC) also likely exists. The PANI–ZnO layers controlled the movement of the carriers, and the indium tin oxide–polyaniline–zinc oxide–aluminum (ITO–PANI–ZnO–Al) memory device shows a hysteresis-type current–voltage characteristic. It portrays a specific kind of memory devices with low-cost and low power consumption non-volatile memory applications.