High carrier mobility epitaxially aligned PtSe2 films grown by one-zone selenization

[Display omitted] •Simple selenization method to grow large-area and thin PtSe2 films.•Observation of thin-film interferences in X-ray diffraction proves thickness homogeneity and low film surface roughness.•Epitaxial ordering of PtSe2 films on the c-plane sapphire.•High charge-carrier mobility exceeding 20 cm2/V.s observed for thin PtSe2 films by four-probe Hall measurements. Few-layer PtSe2 films are promising candidates for applications in high-speed electronics, spintronics and photodetectors. Reproducible fabrication of large-area highly crystalline films is, however, still a challenge. Here, we report the fabrication of epitaxially aligned PtSe2 films using one-zone selenization of pre-sputtered platinum layers. We have studied the influence of growth conditions on structural and electrical properties of the films prepared from Pt layers with different initial thickness. The best results were obtained for the PtSe2 layers grown at elevated temperatures (600 °C). The films exhibit signatures for a long-range in-plane ordering resembling an epitaxial growth. The charge carrier mobility determined by Hall-effect measurements is up to 24 cm2/V.s.