CdSe reinforced polythiophene nanocomposites as excellent materials for diode applications

In the present work, nano-rods of mixed semiconductors were reinforced to conducting polymers to get their composites. CdSe semiconductor nanoparticles were reinforced into the conducting polymer polythiophene (PTh) at room temperature following an oxidation polymerization method. This method was rapid, cost effective and produced larger yield of polymer. X-ray diffraction (XRD) data of composites revealed that the crystallite size was of the order of 45 47 nm. Field emission scanning electron microscopic (FESEM) analysis showed horizontal cross section of CdSe nanoparticles after they were embedded into the PTh matrix. In the composites phase, the nano-rods of CdSe were seen lying over the PTh matrix. UV-Vis spectral studies showed reduction in the energy band gap from 3.05 eV of native PTh to 2.26 eV of PTh/CdSe nanocomposites I-V plots of nanocomposites comprising of p-type PTh and n-type CdSe showed similar characteristics as those of the junction diode. The DC conductivity and short circuit current (J(sc)) of PTh/CdSe nanocomposites indicated drastic changes as compared to those of the pure PTh. Since, I-V plot of nanocomposites phase resembled well with that of a junction diode, the as-synthesized materials has potential to be used in diode applications.