Donor-acceptor nature of orange photoluminescence in AlN

Recombination dynamics, photoluminescence and photoluminescence excitation spectra have been investigated for 1.9 eV photoluminescence band in AlN in the temperature range of 5-650 K. The recombination dynamics for the 1.9 eV photoluminescence band has been described by a model of donor-acceptor rec...

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Veröffentlicht in:	Semiconductor science and technology 2020-12, Vol.35 (12), p.125006, Article 125006
Hauptverfasser:	Aleksandrov, Ivan A, Malin, Timur V, Milakhin, Denis S, Ber, Boris Ya, Kazantsev, Dmitrii Yu, Zhuravlev, Konstantin S
Format:	Artikel
Sprache:	eng
Schlagworte:	AlN defects Engineering Engineering, Electrical & Electronic Materials Science Materials Science, Multidisciplinary photoluminescence Physical Sciences Physics Physics, Condensed Matter Science & Technology Technology
Online-Zugang:	Volltext
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