Donor-acceptor nature of orange photoluminescence in AlN
Recombination dynamics, photoluminescence and photoluminescence excitation spectra have been investigated for 1.9 eV photoluminescence band in AlN in the temperature range of 5-650 K. The recombination dynamics for the 1.9 eV photoluminescence band has been described by a model of donor-acceptor rec...
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Veröffentlicht in: | Semiconductor science and technology 2020-12, Vol.35 (12), p.125006, Article 125006 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | Recombination dynamics, photoluminescence and photoluminescence excitation spectra have been investigated for 1.9 eV photoluminescence band in AlN in the temperature range of 5-650 K. The recombination dynamics for the 1.9 eV photoluminescence band has been described by a model of donor-acceptor recombination with taking into account a broadening due to electron coupling with local lattice vibrations of a deep level defect. The experimental results have been compared with density functional theory calculations of luminescence peak energies and line shapes of band to defect and donor-acceptor transitions, and possible origin of the orange photoluminescence band in AlN has been discussed. |
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ISSN: | 0268-1242 1361-6641 |
DOI: | 10.1088/1361-6641/abacdd |