Laser-induced damage threshold of the nonlinear crystals BaGa4Se7 and BaGa2GeSe6 at 2091 nm in the nanosecond regime

Laser-induced damage threshold of the nonlinear crystals BaGa4Se7 and BaGa2GeSe6 at 2091 nm in the nanosecond regime

The surface laser-induced damage threshold (LIDT) of BaGa4Se7 and BaGa2GeSe6 nonlinear crystals was studied at 2091 nm. Both yellow and dark yellow phases of BaGa4Se7 were investigated. The Ho:YAG laser generating nanosecond pulses at 2 kHz, 5 kHz, and 10 kHz was used as a radiation source. The R-on...

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Veröffentlicht in:Journal of the Optical Society of America. B, Optical physics Optical physics, 2020-09, Vol.37 (9), p.2655-2659
Hauptverfasser: Kostyukova, Nadezhda Yu, Boyko, Andrey A., Eranov, Ilya D., Antipov, Oleg L., Kolker, Dmitry B., Kostyukov, Anton, Erushin, Evgenii Yu, Miroshnichenko, Ilya B., Badikov, Dmitrii, Badikov, Valeriy V.
Format: Artikel
Sprache:eng ; jpn
Schlagworte:
Optics
Physical Sciences
Science & Technology
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Zusammenfassung:The surface laser-induced damage threshold (LIDT) of BaGa4Se7 and BaGa2GeSe6 nonlinear crystals was studied at 2091 nm. Both yellow and dark yellow phases of BaGa4Se7 were investigated. The Ho:YAG laser generating nanosecond pulses at 2 kHz, 5 kHz, and 10 kHz was used as a radiation source. The R-on-1 procedure was applied to determine the 0% probability damage threshold. The LIDT of the dark yellow phase of BaGa4Se7 without cleavage planes is very close to the BaGa2GeSe6 LIDT and exceedss by ca. 30% the LIDT of the yellow phase of BaGa4Se7 at 2 and 5 kHz. (C) 2020 Optical Society of America
ISSN:0740-3224
1520-8540
DOI:10.1364/JOSAB.396746