An Integrated Gold-Film Temperature Sensor for In Situ Temperature Measurement of a High-Precision MEMS Accelerometer

Temperature sensors are one of the most important types of sensors, and are employed in many applications, including consumer electronics, automobiles and environmental monitoring. Due to the need to simultaneously measure temperature and other physical quantities, it is often desirable to integrate...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Sensors (Basel, Switzerland) Switzerland), 2020-06, Vol.20 (13), p.3652, Article 3652
Hauptverfasser: Song, Xiaoxiao, Liu, Huafeng, Fang, Yanyan, Zhao, Chun, Qu, Ziqiang, Wang, Qiu, Tu, Liang-Cheng
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Temperature sensors are one of the most important types of sensors, and are employed in many applications, including consumer electronics, automobiles and environmental monitoring. Due to the need to simultaneously measure temperature and other physical quantities, it is often desirable to integrate temperature sensors with other physical sensors, including accelerometers. In this study, we introduce an integrated gold-film resistor-type temperature sensor for in situ temperature measurement of a high-precision MEMS accelerometer. Gold was chosen as the material of the temperature sensor, for both its great resistance to oxidation and its better compatibility with our in-house capacitive accelerometer micro-fabrication process. The proposed temperature sensor was first calibrated and then evaluated. Experimental results showed the temperature measurement accuracy to be 0.08 degrees C; the discrepancies among the sensors were within 0.02 degrees C; the repeatability within seven days was 0.03 degrees C; the noise floor was 1 mK/root Hz@0.01 Hz and 100 mu K/root Hz@0.5 Hz. The integration test with a MEMS accelerometer showed that by subtracting the temperature effect, the bias stability within 46 h for the accelerometer could be improved from 2.15 mu g to 640 ng. This demonstrates the capability of measuring temperature in situ with the potential to eliminate the temperature effects of the MEMS accelerometer through system-level compensation.
ISSN:1424-8220
1424-8220
DOI:10.3390/s20133652