Electronic band structure of (111) SrRuO3 thin films: An angle-resolved photoemission spectroscopy study

We studied the electronic band structure of pulsed laser deposition (PLD) grown (111)-oriented SrRuO3 thin films using in situ angle-resolved photoemission spectroscopy technique. We observed light bands with a renormalized quasiparticle effective mass of about 0.8m(e). The electron-phonon coupling...

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Veröffentlicht in:Physical review. B 2020-07, Vol.102 (4), p.1, Article 041102
Hauptverfasser: Ryu, Hanyoung, Ishida, Yukiaki, Kim, Bongju, Kim, Jeong Rae, Kim, Woo Jin, Kohama, Yoshimitsu, Imajo, Shusaku, Yang, Zhuo, Kyung, Wonshik, Hahn, Sungsoo, Sohn, Byungmin, Song, Inkyung, Kim, Minsoo, Huh, Soonsang, Jung, Jongkeun, Kim, Donghan, Noh, Tae Won, Das, Saikat, Kim, Changyoung
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Sprache:eng
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Zusammenfassung:We studied the electronic band structure of pulsed laser deposition (PLD) grown (111)-oriented SrRuO3 thin films using in situ angle-resolved photoemission spectroscopy technique. We observed light bands with a renormalized quasiparticle effective mass of about 0.8m(e). The electron-phonon coupling underlying this mass renormalization yields a characteristic "kink" in the band dispersion. The self-energy analysis using the Einstein model suggests five optical phonon modes covering an energy range of 44-90 meV contribute to the coupling. In addition, we show that the quasiparticle spectral intensity at the Fermi level is considerably suppressed, and two prominent peaks appear in the valance band spectrum at binding energies of 0.8 and 1.4 eV, respectively. We discuss the possible implications of these observations. Overall, our work demonstrates that high-quality thin films of oxides with large spin-orbit coupling can be grown along the polar (111) orientation by the PLD technique, enabling in situ electronic band structure study. This could allow for characterizing the thickness-dependent evolution of band structure of (111) heterostructures-a prerequisite for exploring possible topological quantum states in the bilayer limit.
ISSN:2469-9950
2469-9969
DOI:10.1103/PhysRevB.102.041102