Temperature‐mediated excitation of defect modes in a periodic structure at terahertz frequencies

The dependence on temperature of a defect mode of a periodic dielectric multilayer is studied in the terahertz range by using the characteristic matrix method. The structure analyzed is composed of alternating layers of silica and polymethylpentene. The material of the defect is the indium antimonid...

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Veröffentlicht in:Microwave and optical technology letters 2020-12, Vol.62 (12), p.3677-3681
Hauptverfasser: De Simone, Roberta, Chiadini, Francesco, Scaglione, Antonio, Fiumara, Vincenzo
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Sprache:eng
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