Temperature‐mediated excitation of defect modes in a periodic structure at terahertz frequencies

The dependence on temperature of a defect mode of a periodic dielectric multilayer is studied in the terahertz range by using the characteristic matrix method. The structure analyzed is composed of alternating layers of silica and polymethylpentene. The material of the defect is the indium antimonide (InSb), which has a permittivity that is temperature dependent causing a blueshift of the defect mode as the temperature rises. Although at terahertz frequencies, the InSb is a dissipative material, choosing appropriately the thickness of the defect results in a defect mode with a transmittance that, throughout the range explored, always remains above 0.9 with a maximum of 0.9914.