Roadmap to Gigahertz Organic Transistors

Despite the large body of research conducted on organic transistors, the transit frequency of organic field‐effect transistors has seen virtually no improvement for a decade and remains far below 1 GHz. One reason is that most of the research is still focused on improving the charge‐carrier mobility...

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Veröffentlicht in:Advanced functional materials 2020-05, Vol.30 (20), p.n/a, Article 1903812
Hauptverfasser: Zschieschang, Ute, Borchert, James W., Giorgio, Michele, Caironi, Mario, Letzkus, Florian, Burghartz, Joachim N., Waizmann, Ulrike, Weis, Jürgen, Ludwigs, Sabine, Klauk, Hagen
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Sprache:eng
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Zusammenfassung:Despite the large body of research conducted on organic transistors, the transit frequency of organic field‐effect transistors has seen virtually no improvement for a decade and remains far below 1 GHz. One reason is that most of the research is still focused on improving the charge‐carrier mobility, a parameter that has little influence on the transit frequency of short‐channel transistors. By examining the fundamental equations for the transit frequency of field‐effect transistors and by extrapolating recent progress on the relevant device parameters, a roadmap to gigahertz organic transistors is derived. Work on organic transistors often focuses on the carrier mobility, which has little influence on the transit frequency. The past decade has thus seen virtually no improvement in the transit frequency of organic transistors. By examining the fundamental equations for transit frequency and recent progress in improving the relevant device parameters, a roadmap to gigahertz organic transistors is developed.
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.201903812