Laser induced ultrafast combustion synthesis of solution-based AlOx for thin film transistors

Solution processing of amorphous metal oxides using excimer laser annealing (ELA) has been lately used as a viable option to implement large-area electronics, offering high quality materials at a reduced associated cost and process time. However, the research has been focused on semiconductor and tr...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2020-01, Vol.8 (18), p.6176-6184
Hauptverfasser: Carlos, Emanuel, Dellis, Spilios, Kalfagiannis, Nikolaos, Koutsokeras, Loukas, Koutsogeorgis, Demosthenes C., Branquinho, Rita, Martins, Rodrigo, Fortunato, Elvira
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Solution processing of amorphous metal oxides using excimer laser annealing (ELA) has been lately used as a viable option to implement large-area electronics, offering high quality materials at a reduced associated cost and process time. However, the research has been focused on semiconductor and transparent conductive oxide layers rather than on the insulator layer. In this work we present amorphous aluminum oxide (AlOx) thin films produced at low temperature (
ISSN:2050-7526
2050-7534
DOI:10.1039/d0tc01204a