Laser induced ultrafast combustion synthesis of solution-based AlOx for thin film transistors
Solution processing of amorphous metal oxides using excimer laser annealing (ELA) has been lately used as a viable option to implement large-area electronics, offering high quality materials at a reduced associated cost and process time. However, the research has been focused on semiconductor and tr...
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Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2020-01, Vol.8 (18), p.6176-6184 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | Solution processing of amorphous metal oxides using excimer laser annealing (ELA) has been lately used as a viable option to implement large-area electronics, offering high quality materials at a reduced associated cost and process time. However, the research has been focused on semiconductor and transparent conductive oxide layers rather than on the insulator layer. In this work we present amorphous aluminum oxide (AlOx) thin films produced at low temperature ( |
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ISSN: | 2050-7526 2050-7534 |
DOI: | 10.1039/d0tc01204a |