Depletion induced depolarization field in Hf1−xZrxO2 metal-ferroelectric-semiconductor capacitors on germanium

Germanium Metal-Ferroelectric-Semiconductor (MFS) capacitors based on ferroelectric Hf1−xZrxO2 (HZO) with clean, oxide free Ge/HZO interfaces emerge as an interesting layer structure for the fabrication of ferroelectric field effect transistor (FeFET) non-volatile memory devices. It is shown that, a...

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Veröffentlicht in:	Applied physics letters 2020-05, Vol.116 (18)
Hauptverfasser:	Zacharaki, C., Tsipas, P., Chaitoglou, S., Evangelou, E. K., Istrate, C. M., Pintilie, L., Dimoulas, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Capacitors Coercivity Current carriers Depletion Depolarization Energy gap Ferroelectric materials Ferroelectricity Field effect transistors Germanium Hysteresis Low temperature Low voltage Memory devices Physical Sciences Physics Physics, Applied Room temperature Science & Technology Semiconductor devices Temperature
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Zusammenfassung:	Germanium Metal-Ferroelectric-Semiconductor (MFS) capacitors based on ferroelectric Hf1−xZrxO2 (HZO) with clean, oxide free Ge/HZO interfaces emerge as an interesting layer structure for the fabrication of ferroelectric field effect transistor (FeFET) non-volatile memory devices. It is shown that, at low temperature (
ISSN:	0003-6951 1077-3118
DOI:	10.1063/5.0007111