Current–voltage characterizations and photovoltaic properties of Se80Te15Ge5/p-Si heterojunction

Thin films of Se 80 Te 15 Ge 5 were prepared by thermal evaporation technique onto a single-crystal p-Si substrate, and Au/Se 80 Te 15 Ge 5 /p-Si/Al heterojunction was obtained. The current–voltage characteristics of the junction in dark were evaluated in temperature range of 303–343 K and the voltage applied ranged from − 2 to + 2 V. It was found that the junction exhibits diode behavior with calculation for some diode parameters as rectification ratio, ideality factor( m ), series resistance ( R s ) and shunt resistance ( R sh ). From the I – V characteristic curves of Au/Se 80 Te 15 Ge 5 /p-Si/Al, the operating mechanism was examined in both forward and reverse directions of the junction. The photovoltaic properties of the Au/Se 80 Te 15 Ge 5 /p-Si/Al under illumination of white light were investigated. The efficiency of the cell estimated and has a value of 3.68.