Temperature Dependence of the Electrophysical Properties of Crystals of the A(4)BX(6) Group

We present the results of experimental investigations of the temperature behaviors of the volt-ampere characteristics of Tl4HgI6 and Tl4CdI6 crystals. The temperature dependence of resistance is analyzed and the resistivities of the samples at room temperature are determined. The activation energy i...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Materials science (New York, N.Y.) N.Y.), 2020-01, Vol.55 (4), p.602-608
Hauptverfasser:	Kashuba, A., Petrus, R. Yu, Andrievskyi, B., Solov'ev, M., Semkiv, I., Malyi, T. S., Chylii, M. O., Stakhura, V. B., Shchepanskyi, P. A., Franiv, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Materials Science Materials Science, Multidisciplinary Science & Technology Technology
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	We present the results of experimental investigations of the temperature behaviors of the volt-ampere characteristics of Tl4HgI6 and Tl4CdI6 crystals. The temperature dependence of resistance is analyzed and the resistivities of the samples at room temperature are determined. The activation energy is computed and the dynamics of changes in the temperature coefficient of resistance is determined for these crystals. The presence of structural transformation in the Tl4HgI6 crystal and its absence in the Tl4CdI6 crystal (within the temperature range 293-490 degrees K) are established. The possibility of practical application of the investigated samples is analyzed.
ISSN:	1068-820X 1573-885X
DOI:	10.1007/s11003-020-00345-w