Frequency- and temperature-dependent dielectric features of multi-component electronic material: (Pb0.8Dy0.1Bi0.1)(Fe0.2Ti0.8)O-3

A multiple cation containing sample as [(Pb0.8Dy0.1Bi0.1)(Fe0.2Ti0.8)O-3] is fabricated by adopting the solid-state reaction process. The crystallographic structure, crystallite size, morphology, dielectric behavior, conductivity, polarization, impedance as well as electric modulus spectroscopy are...

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Veröffentlicht in:Applied physics. A, Materials science & processing Materials science & processing, 2020-04, Vol.126 (5), Article 377
Hauptverfasser: Samal, Satish K., Halder, Sarbasri, Mallick, Manas Kumar, Choudhary, R. N. P., Bhuyan, Satyanarayan
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Sprache:eng
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Zusammenfassung:A multiple cation containing sample as [(Pb0.8Dy0.1Bi0.1)(Fe0.2Ti0.8)O-3] is fabricated by adopting the solid-state reaction process. The crystallographic structure, crystallite size, morphology, dielectric behavior, conductivity, polarization, impedance as well as electric modulus spectroscopy are experimentally observed for this fabricated composition. The crystal structure of the specimen is observed to be tetragonal from X-ray diffraction. The micrograph shows the presence of polycrystalline microstructure with uniform distributed grains. The impedance spectroscopy analysis as a function of temperature (100-450 degrees C) and frequency (1-1000 kHz) helps to signify the resistive and capacitive behavior of the compound. The nature of the prepared specimen and conduction mechanism is illustrated through AC conductivity study. The modulus analysis elucidates the existence of non-Debye dielectric relaxation nature in the synthesized compound. The compound possesses appreciable value of loss tangent and remnant polarization, i.e., 0.02 and 0.014 mu C/cm(2), with high value of dielectric constant at room temperature. The dysprosium doping entails stability with interesting electrical and dielectric properties. The preliminary capacitive characteristic has been elucidated, thus making it a stronger contender for functional device applications.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-020-03542-1