One-Step Incorporation of Nitrogen and Vanadium between Ti3C2Tx MXene Interlayers Enhances Lithium Ion Storage Capability
Two-dimensional (2D) transition-metal carbide materials termed MXene have attracted huge attention in the field of electrochemical energy storage. To this end, MXenes whose capability depends on the M transition elements represent a new paradigm extending beyond the realm of oft-explored elemental 2...
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Veröffentlicht in: | Journal of physical chemistry. C 2020-03, Vol.124 (11), p.6012-6021 |
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Hauptverfasser: | , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Two-dimensional (2D) transition-metal carbide materials termed MXene have attracted huge attention in the field of electrochemical energy storage. To this end, MXenes whose capability depends on the M transition elements represent a new paradigm extending beyond the realm of oft-explored elemental 2D materials beginning with graphene. However, the as-prepared MXenes suffer from unsatisfied capability due to the loss M elements during the etching process for the preparation of MXenes. Here, taking Ti3C2Tx as an example, we demonstrate that nitrogen and vanadium incorporation by means of microwave irradiation in NH4VO3-containing ethylene glycol can significantly improve the electrochemical performance of multilayered Ti3C2Tx MXene. While maintaining the 2D structure of MXene layers, the N and V elements are incorporated between the Ti3C2Tx MXene interlayers in the forms of C-V-OH, C-V-O, V-O, and Ti-O-N species. Specifically, at a V:Ti atomic ratio of about 1:30 (N:Ti = 0.29), N and V incorporation between the Ti3C2Tx interlayers gives rise to an increase in capability by about 40%, corresponding to an impressive reversible capacity of 92 mA h(-1) at 3 C rate after 1000 cycles. These results demonstrate that N(V)-incorporated Ti3C2Tx MXenes offer fascinating potential for high-performance electrode materials and provide guidelines for designing and engineering anode materials. |
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ISSN: | 1932-7447 1932-7455 |
DOI: | 10.1021/acs.jpcc.0c00524 |