Effect of Titanium Induced Chemical Inhomogeneity on Crystal Structure, Electronic Structure, and Optical Properties of Wide Band Gap Ga2O3

Tailoring the optical and electronic properties of wide band gap β-Ga2O3 has been of tremendous importance to utilize the full potential of the material in current and emerging technological applications in electronics, optics, and optoelectronics. In the present work, we report the effect of Ti-dopant insolubility driven chemical inhomogeneity on the structural, morphological, chemical bonding, electronic structure, and band gap red shift characteristics in Ga2O3 polycrystalline compounds. Ga2–2x Ti x O3 (GTO; 0 ≤ x ≤ 0.20) compounds were synthesized using a conventional high-temperature solid state reaction route under variable calcination temperatures (1050–1250 °C) while sintering was performed at 1350 °C. X-ray diffraction analysis of GTO samples reveals that the formation of single-phase compounds occurs only at a very low concentration of Ti doping (