Optical Transistor for Amplification of Radiation in a Broadband Terahertz Domain

We propose a new type of optical transistor for a broadband amplification of terahertz radiation. It is made of a graphene-superconductor hybrid, where electrons and Cooper pairs couple by Coulomb forces. The transistor operates via the propagation of surface plasmons in both layers, and the origin...

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Veröffentlicht in:Physical review letters 2020-02, Vol.124 (8), p.087701-087701, Article 087701
Hauptverfasser: Villegas, K. H. A., Kusmartsev, F. V., Luo, Y., Savenko, I. G.
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Sprache:eng
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Zusammenfassung:We propose a new type of optical transistor for a broadband amplification of terahertz radiation. It is made of a graphene-superconductor hybrid, where electrons and Cooper pairs couple by Coulomb forces. The transistor operates via the propagation of surface plasmons in both layers, and the origin of amplification is the quantum capacitance of graphene. It leads to terahertz waves amplification, the negative power absorption, and as a result, the system yields positive gain, and the hybrid acts like an optical transistor, operating with the terahertz light. It can, in principle, amplify even a whole spectrum of chaotic signals (or noise), which is required for numerous biological applications.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.124.087701