Analytical Modeling of ZrO2, HfO2 and SiO2 Effect over Tunneling Field Effect Transistor

These days, tunneling field effect transistors (TFET) for their ability in decrease of off-current transistors and also for electronic device power consumption, it is best point out for a scientist to research on this kind of transistors. By reducing off-current, on-current decreases too in compare to MOSFET transistors. Researchers are trying to reduce-off-current so that a minimum decrease in on-current occurs. One of the methods is to select a suitable oxide for the gate electrode. This paper presents an analytical model for the potential distribution of ZrO 2 , HfO 2 and SiO 2 effect over TFET. Using the potential distribution, the tunneling drain current is derived analytically by integrating the band-to-band tunneling generation rate over the device volume. The all-clear proposed that analytical models are validated via numerical results obtained from device simulations in SILVACO ATLAS software based on a non-local band-to-band tunneling model. Then results were ompared together. The results show the optimized on-current against off-current ratio and subthreshold swing.