Band alignment of III-N, ZnO and II-IV-N-2 semiconductors from the electron affinity rule

Band alignment of III-N, ZnO and II-IV-N-2 semiconductors from the electron affinity rule

The natural band alignment between various II-IV-N-2 and III-N and ZnO semiconductors are determined by means of first-principles surface calculations of their electron affinities. While these ignore specific interface dipole formation and strain effects, they provide a first guidance to the constru...

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Veröffentlicht in:Journal of physics. D, Applied physics Applied physics, 2020-01, Vol.53 (1), p.15111, Article 015111
Hauptverfasser: Lyu, Sai, Lambrecht, Walter R. L.
Format: Artikel
Sprache:eng
Schlagworte:
Physical Sciences
Physics
Physics, Applied
Science & Technology
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Zusammenfassung:The natural band alignment between various II-IV-N-2 and III-N and ZnO semiconductors are determined by means of first-principles surface calculations of their electron affinities. While these ignore specific interface dipole formation and strain effects, they provide a first guidance to the construction of heterojunction devices involving this family of materials.
ISSN:0022-3727
1361-6463
DOI:10.1088/1361-6463/ab4baa