Zirconia quantum dots for a nonvolatile resistive random access memory device

We propose a nonvolatile resistive random access memory device by employing nanodispersion of zirconia (ZrO 2 ) quantum dots (QDs) for the formation of an active layer. The memory devices comprising a typical sandwich structure of Ag (top)/ZrO 2 (active layer)/Ti (bottom) are fabricated using a facile spin-coating method. The optimized device exhibits a high resistance state/low resistance state resistance difference (about 10 Ω), a good cycle performance (the number of cycles larger than 100), and a relatively low conversion current (about 1 µA). Atomic force microscopy and scanning electron microscope are used to observe the surface morphology and stacking state of the ZrO 2 active layer. Experimental results show that the ZrO 2 active layer is stacked compactly and has a low roughness (Ra=4.49 nm) due to the uniform distribution of the ZrO 2 QDs. The conductive mechanism of the Ag/ZrO 2 /Ti device is analyzed and studied, and the conductive filaments of Ag ions and oxygen vacancies are focused on to clarify the resistive switching memory behavior. This study offers a facile approach of memristors for future electronic applications.