Electrical characteristics and microstructures of Pr6O11-doped Bi4Ti3O12 thin films

Pr6O11-doped bismuth titanate (BixPryTi3O12, BPT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicate that all of BPT films consist of...

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Veröffentlicht in:Transactions of Nonferrous Metals Society of China 2009-02, Vol.19 (1), p.138-142
Hauptverfasser: CHEN, Min, HUANG, Ke-long, MEI, Xiao-an, HUANG, Chong-qing, LIU, Jing, CAI, An-hui
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Sprache:eng
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Zusammenfassung:Pr6O11-doped bismuth titanate (BixPryTi3O12, BPT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicate that all of BPT films consist of single phase of a bismuth-layered structure with well-developed rod-like grains. For samples with y=0.0,0.3, 1.2 and 1.5, I -E characteristics exhibit negative differential resistance behaviors and their ferroelectric hysteresis loops are characterized by large leakage current. Whereas for samples with y=0.6 and 0.9, I -E characteristics are of simple ohmic behaviors and their ferroelectric hysteresis loops are saturated and undistorted. The remanent polarization (Pr) and coercive field (Ec) of the BPT Film with y=0.9 are above 35 muC/cm2 and 80 kV/cm, respectively.
ISSN:1003-6326
DOI:10.1016/S1003-6326(08)60241-1