Lateral β-Ga2O3 Schottky barrier diode fabricated on (–201) single crystal substrate and its temperature-dependent current–voltage characteristics

Lateral β-Ga2O3 Schottky barrier diodes(SBDs)each are fabricated on an unintentionally doped(-201)n-type β-Ga2O3 single crystal substrate by designing L-shaped electrodes.By introducing sidewall electrodes on both sides of the conductive channel,the SBD demonstrates a high current density of 223 mA/mm and low specific on-resistance of 4.7 mΩ·cm2.Temperature-dependent performance is studied and the Schottky barrier height is extracted to be in a range between 1.3 eV and 1.35 eV at temperatures ranging from 20℃to 150℃.These results suggest that the lateralβ-Ga2O3 SBD has a tremendous potential for future power electronic applications.