Insight into influence of thermodynamic coefficients on transient negative capacitance in Zr-doped HfO2 ferroelectric capacitors

We study the influence of the thermodynamic coefficients on transient negative capacitance for the Zr-doped HfO2(HZO) ferroelectric capacitors by the theoretical simulation based on the Landau-Khalatnikov (L-K) theory and experi-mental measurement of electrical properties in the resistor-ferroelectr...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:中国物理B(英文版) 2021-12, Vol.30 (12), p.669-674
Hauptverfasser: Yuan-Yuan Zhang, Xiao-Qing Sun, Jun-Shuai Chai, Hao Xu, Xue-Li Ma, Jin-Juan Xiang, Kai Han, Xiao-Lei Wang, Wen-Wu Wang
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 674
container_issue 12
container_start_page 669
container_title 中国物理B(英文版)
container_volume 30
creator Yuan-Yuan Zhang
Xiao-Qing Sun
Jun-Shuai Chai
Hao Xu
Xue-Li Ma
Jin-Juan Xiang
Kai Han
Xiao-Lei Wang
Wen-Wu Wang
description We study the influence of the thermodynamic coefficients on transient negative capacitance for the Zr-doped HfO2(HZO) ferroelectric capacitors by the theoretical simulation based on the Landau-Khalatnikov (L-K) theory and experi-mental measurement of electrical properties in the resistor-ferroelectric capacitor (R-FEC) circuit.Our results show that the thermodynamic coefficients α,β and γ also play a key role for the transient NC effect besides the viscosity coefficient and series resistor.Moreover,the smaller coefficients α and β,the more significant the transient NC effect.In addition,we also find that the thermodynamic process of transient NC does not obey the generally accepted viewpoint of Gibbs free energy minimization.
doi_str_mv 10.1088/1674-1056/ac01c4
format Article
fullrecord <record><control><sourceid>wanfang_jour</sourceid><recordid>TN_cdi_wanfang_journals_zgwl_e202112079</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><wanfj_id>zgwl_e202112079</wanfj_id><sourcerecordid>zgwl_e202112079</sourcerecordid><originalsourceid>FETCH-LOGICAL-w117t-26809d2697a33e2c6e0a79fd5a7ce0cf8c027f2c695b1be824c8d3800db360e93</originalsourceid><addsrcrecordid>eNo9Tb9PAjEY7aCJiO6O3ZxOvrbQ9kZDVEhIWHRxIaX9epQcLekViU7-6R6BuLyX9_J-EPLA4ImB1iMm1bhiMJEjY4HZ8RUZ_Fs35LbrtgCSARcD8juPXWg2hYZYUg--PWC0SJOnZYN5l9x3NLtgqU3ofbABY-loirRk0zd7RSM2poQvpNbsjQ3FnPoh0s9cubRHR2d-yanHnBO2aEs-rZ2jKXd35NqbtsP7Cw_Jx-vL-3RWLZZv8-nzojoypkrFpYbacVkrIwRyKxGMqr2bGGURrNcWuPK9X0_WbI2aj612QgO4tZCAtRiSx_Pu0URvYrPapkOO_ePqpzm2K-TAGeOgavEHY3tj9A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Insight into influence of thermodynamic coefficients on transient negative capacitance in Zr-doped HfO2 ferroelectric capacitors</title><source>IOP Publishing Journals</source><creator>Yuan-Yuan Zhang ; Xiao-Qing Sun ; Jun-Shuai Chai ; Hao Xu ; Xue-Li Ma ; Jin-Juan Xiang ; Kai Han ; Xiao-Lei Wang ; Wen-Wu Wang</creator><creatorcontrib>Yuan-Yuan Zhang ; Xiao-Qing Sun ; Jun-Shuai Chai ; Hao Xu ; Xue-Li Ma ; Jin-Juan Xiang ; Kai Han ; Xiao-Lei Wang ; Wen-Wu Wang</creatorcontrib><description>We study the influence of the thermodynamic coefficients on transient negative capacitance for the Zr-doped HfO2(HZO) ferroelectric capacitors by the theoretical simulation based on the Landau-Khalatnikov (L-K) theory and experi-mental measurement of electrical properties in the resistor-ferroelectric capacitor (R-FEC) circuit.Our results show that the thermodynamic coefficients α,β and γ also play a key role for the transient NC effect besides the viscosity coefficient and series resistor.Moreover,the smaller coefficients α and β,the more significant the transient NC effect.In addition,we also find that the thermodynamic process of transient NC does not obey the generally accepted viewpoint of Gibbs free energy minimization.</description><identifier>ISSN: 1674-1056</identifier><identifier>DOI: 10.1088/1674-1056/ac01c4</identifier><language>eng</language><publisher>Key Laboratory of Microelectronics &amp; Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China</publisher><ispartof>中国物理B(英文版), 2021-12, Vol.30 (12), p.669-674</ispartof><rights>Copyright © Wanfang Data Co. Ltd. All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://www.wanfangdata.com.cn/images/PeriodicalImages/zgwl-e/zgwl-e.jpg</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Yuan-Yuan Zhang</creatorcontrib><creatorcontrib>Xiao-Qing Sun</creatorcontrib><creatorcontrib>Jun-Shuai Chai</creatorcontrib><creatorcontrib>Hao Xu</creatorcontrib><creatorcontrib>Xue-Li Ma</creatorcontrib><creatorcontrib>Jin-Juan Xiang</creatorcontrib><creatorcontrib>Kai Han</creatorcontrib><creatorcontrib>Xiao-Lei Wang</creatorcontrib><creatorcontrib>Wen-Wu Wang</creatorcontrib><title>Insight into influence of thermodynamic coefficients on transient negative capacitance in Zr-doped HfO2 ferroelectric capacitors</title><title>中国物理B(英文版)</title><description>We study the influence of the thermodynamic coefficients on transient negative capacitance for the Zr-doped HfO2(HZO) ferroelectric capacitors by the theoretical simulation based on the Landau-Khalatnikov (L-K) theory and experi-mental measurement of electrical properties in the resistor-ferroelectric capacitor (R-FEC) circuit.Our results show that the thermodynamic coefficients α,β and γ also play a key role for the transient NC effect besides the viscosity coefficient and series resistor.Moreover,the smaller coefficients α and β,the more significant the transient NC effect.In addition,we also find that the thermodynamic process of transient NC does not obey the generally accepted viewpoint of Gibbs free energy minimization.</description><issn>1674-1056</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNo9Tb9PAjEY7aCJiO6O3ZxOvrbQ9kZDVEhIWHRxIaX9epQcLekViU7-6R6BuLyX9_J-EPLA4ImB1iMm1bhiMJEjY4HZ8RUZ_Fs35LbrtgCSARcD8juPXWg2hYZYUg--PWC0SJOnZYN5l9x3NLtgqU3ofbABY-loirRk0zd7RSM2poQvpNbsjQ3FnPoh0s9cubRHR2d-yanHnBO2aEs-rZ2jKXd35NqbtsP7Cw_Jx-vL-3RWLZZv8-nzojoypkrFpYbacVkrIwRyKxGMqr2bGGURrNcWuPK9X0_WbI2aj612QgO4tZCAtRiSx_Pu0URvYrPapkOO_ePqpzm2K-TAGeOgavEHY3tj9A</recordid><startdate>20211201</startdate><enddate>20211201</enddate><creator>Yuan-Yuan Zhang</creator><creator>Xiao-Qing Sun</creator><creator>Jun-Shuai Chai</creator><creator>Hao Xu</creator><creator>Xue-Li Ma</creator><creator>Jin-Juan Xiang</creator><creator>Kai Han</creator><creator>Xiao-Lei Wang</creator><creator>Wen-Wu Wang</creator><general>Key Laboratory of Microelectronics &amp; Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China</general><general>College of Microelectronics,University of Chinese Academy of Sciences,Beijing 100049,China%Department of Physics and Electronic Science,Weifang University,Weifang 261061,China</general><scope>2B.</scope><scope>4A8</scope><scope>92I</scope><scope>93N</scope><scope>PSX</scope><scope>TCJ</scope></search><sort><creationdate>20211201</creationdate><title>Insight into influence of thermodynamic coefficients on transient negative capacitance in Zr-doped HfO2 ferroelectric capacitors</title><author>Yuan-Yuan Zhang ; Xiao-Qing Sun ; Jun-Shuai Chai ; Hao Xu ; Xue-Li Ma ; Jin-Juan Xiang ; Kai Han ; Xiao-Lei Wang ; Wen-Wu Wang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-w117t-26809d2697a33e2c6e0a79fd5a7ce0cf8c027f2c695b1be824c8d3800db360e93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yuan-Yuan Zhang</creatorcontrib><creatorcontrib>Xiao-Qing Sun</creatorcontrib><creatorcontrib>Jun-Shuai Chai</creatorcontrib><creatorcontrib>Hao Xu</creatorcontrib><creatorcontrib>Xue-Li Ma</creatorcontrib><creatorcontrib>Jin-Juan Xiang</creatorcontrib><creatorcontrib>Kai Han</creatorcontrib><creatorcontrib>Xiao-Lei Wang</creatorcontrib><creatorcontrib>Wen-Wu Wang</creatorcontrib><collection>Wanfang Data Journals - Hong Kong</collection><collection>WANFANG Data Centre</collection><collection>Wanfang Data Journals</collection><collection>万方数据期刊 - 香港版</collection><collection>China Online Journals (COJ)</collection><collection>China Online Journals (COJ)</collection><jtitle>中国物理B(英文版)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yuan-Yuan Zhang</au><au>Xiao-Qing Sun</au><au>Jun-Shuai Chai</au><au>Hao Xu</au><au>Xue-Li Ma</au><au>Jin-Juan Xiang</au><au>Kai Han</au><au>Xiao-Lei Wang</au><au>Wen-Wu Wang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Insight into influence of thermodynamic coefficients on transient negative capacitance in Zr-doped HfO2 ferroelectric capacitors</atitle><jtitle>中国物理B(英文版)</jtitle><date>2021-12-01</date><risdate>2021</risdate><volume>30</volume><issue>12</issue><spage>669</spage><epage>674</epage><pages>669-674</pages><issn>1674-1056</issn><abstract>We study the influence of the thermodynamic coefficients on transient negative capacitance for the Zr-doped HfO2(HZO) ferroelectric capacitors by the theoretical simulation based on the Landau-Khalatnikov (L-K) theory and experi-mental measurement of electrical properties in the resistor-ferroelectric capacitor (R-FEC) circuit.Our results show that the thermodynamic coefficients α,β and γ also play a key role for the transient NC effect besides the viscosity coefficient and series resistor.Moreover,the smaller coefficients α and β,the more significant the transient NC effect.In addition,we also find that the thermodynamic process of transient NC does not obey the generally accepted viewpoint of Gibbs free energy minimization.</abstract><pub>Key Laboratory of Microelectronics &amp; Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China</pub><doi>10.1088/1674-1056/ac01c4</doi><tpages>6</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1674-1056
ispartof 中国物理B(英文版), 2021-12, Vol.30 (12), p.669-674
issn 1674-1056
language eng
recordid cdi_wanfang_journals_zgwl_e202112079
source IOP Publishing Journals
title Insight into influence of thermodynamic coefficients on transient negative capacitance in Zr-doped HfO2 ferroelectric capacitors
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-12T15%3A31%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-wanfang_jour&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Insight%20into%20influence%20of%20thermodynamic%20coefficients%20on%20transient%20negative%20capacitance%20in%20Zr-doped%20HfO2%20ferroelectric%20capacitors&rft.jtitle=%E4%B8%AD%E5%9B%BD%E7%89%A9%E7%90%86B%EF%BC%88%E8%8B%B1%E6%96%87%E7%89%88%EF%BC%89&rft.au=Yuan-Yuan%20Zhang&rft.date=2021-12-01&rft.volume=30&rft.issue=12&rft.spage=669&rft.epage=674&rft.pages=669-674&rft.issn=1674-1056&rft_id=info:doi/10.1088/1674-1056/ac01c4&rft_dat=%3Cwanfang_jour%3Ezgwl_e202112079%3C/wanfang_jour%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_wanfj_id=zgwl_e202112079&rfr_iscdi=true