Studies on Dielectric Properties of Silicon Nitride at High Temperature

In this paper, the dielectric properties of silicon nitride are studied using the dielectric polarization theories. According to the developed dielectric models, the temperature dependence of dielectric constant and loss of silicon nitride is mainly analyzed. In addition, the impact of Li^+, K^+, Ca...

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Veröffentlicht in:Journal of electronic science and technology of China 2007, Vol.5 (4), p.316-319
1. Verfasser: Ting Zhang Shu-Ren Zhang Meng-Qiang Wu Wei-Jun Sang Zheng-Ping Gao Zhong-Ping Li
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Sprache:eng
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Zusammenfassung:In this paper, the dielectric properties of silicon nitride are studied using the dielectric polarization theories. According to the developed dielectric models, the temperature dependence of dielectric constant and loss of silicon nitride is mainly analyzed. In addition, the impact of Li^+, K^+, Ca^2+, Al^3+ and Mg^2+ doping on the dielectric properties of silicon nitride are also estimated.
ISSN:1672-6464