Development on transparent conductive ZnO thin films doped with various impurity elements
A general review of recent research progress in fabricating transparent conductive ZnO thin films by means of intentional doping and codoping with In, Ga, A1, Mg, Li, F, H, N, and P, divided into metals and nonmetals, is presented in this article. The main emphasis is placed on introducing and discu...
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| Veröffentlicht in: | Rare metals 2011-04, Vol.30 (2), p.175-182 |
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| creator | Zhao, Lin Shao, Guangjie Song, Shitao Qin, Xiujuan Han, Sihuizhi |
| description | A general review of recent research progress in fabricating transparent conductive ZnO thin films by means of intentional doping and codoping with In, Ga, A1, Mg, Li, F, H, N, and P, divided into metals and nonmetals, is presented in this article. The main emphasis is placed on introducing and discussing the recent research achievements on the mechanisms of the incorporation of these impurities, and their effects on the electrical and optical properties. Lastly, this article concludes with a summary of the present state of investigations on doping elements in fabricating functional ZnO thin films for photoelectric applications, and with our personal view of the perspective of future studies on doped ZnO thin films. |
| doi_str_mv | 10.1007/s12598-011-0220-x |
| format | Article |
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The main emphasis is placed on introducing and discussing the recent research achievements on the mechanisms of the incorporation of these impurities, and their effects on the electrical and optical properties. 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All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c406t-2b22e36a8be528daf249b0657e5f8b4e00a09d2d66322fc52d0595cde63a33e03</citedby><cites>FETCH-LOGICAL-c406t-2b22e36a8be528daf249b0657e5f8b4e00a09d2d66322fc52d0595cde63a33e03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/85314X/85314X.jpg</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s12598-011-0220-x$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s12598-011-0220-x$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Zhao, Lin</creatorcontrib><creatorcontrib>Shao, Guangjie</creatorcontrib><creatorcontrib>Song, Shitao</creatorcontrib><creatorcontrib>Qin, Xiujuan</creatorcontrib><creatorcontrib>Han, Sihuizhi</creatorcontrib><title>Development on transparent conductive ZnO thin films doped with various impurity elements</title><title>Rare metals</title><addtitle>Rare Metals</addtitle><addtitle>Rare Metals</addtitle><description>A general review of recent research progress in fabricating transparent conductive ZnO thin films by means of intentional doping and codoping with In, Ga, A1, Mg, Li, F, H, N, and P, divided into metals and nonmetals, is presented in this article. 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| subjects | Aluminum Biomaterials Chemistry and Materials Science Doping Energy Gallium Impurities Materials Engineering Materials Science Metallic Materials Nanoscale Science and Technology Optical properties Photoelectricity Physical Chemistry Thin films Zinc oxide ZnO薄膜 元素掺杂 光学性质 功能薄膜 导电氧化锌 研究成果 透明导电 |
| title | Development on transparent conductive ZnO thin films doped with various impurity elements |
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