Development on transparent conductive ZnO thin films doped with various impurity elements

A general review of recent research progress in fabricating transparent conductive ZnO thin films by means of intentional doping and codoping with In, Ga, A1, Mg, Li, F, H, N, and P, divided into metals and nonmetals, is presented in this article. The main emphasis is placed on introducing and discussing the recent research achievements on the mechanisms of the incorporation of these impurities, and their effects on the electrical and optical properties. Lastly, this article concludes with a summary of the present state of investigations on doping elements in fabricating functional ZnO thin films for photoelectric applications, and with our personal view of the perspective of future studies on doped ZnO thin films.