Germanium‐Carbdiyne: A 3D Well‐Defined sp‐Hybridized Carbon‐Based Material with Superhigh Li Storage Property
Carbyne delivers various excellent properties for the existence of the larger number of sp‐hybridized carbon atoms. Here, a 3D well‐defined porous carbon material germanium‐carbdiyne (Ge‐CDY) which is comprised of only sp‐hybridized carbon atoms bridging by Ge atoms has been developed and investigat...
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Veröffentlicht in: | Energy & environmental materials (Hoboken, N.J.) N.J.), 2023-01, Vol.6 (1), p.199-n/a |
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Sprache: | eng |
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Zusammenfassung: | Carbyne delivers various excellent properties for the existence of the larger number of sp‐hybridized carbon atoms. Here, a 3D well‐defined porous carbon material germanium‐carbdiyne (Ge‐CDY) which is comprised of only sp‐hybridized carbon atoms bridging by Ge atoms has been developed and investigated. The unique diamond‐like structure constructed by linear butadiyne bonds and sp3‐hybridized Ge atoms ensures the stability of Ge‐CDY. The large percentage of conjugated alkyne bonds composed of sp‐C guarantees the good conductivity and the low band gap, which were further confirmed experimentally and theoretically, endowing Ge‐CDY with the potential in electrochemical applications. The well‐defined 3D carbon skeleton of Ge‐CDY provides abundant uniform nanopores, which is suitable for metal ions storage and diffusion. Further half‐cell evaluation also demonstrated Ge‐CDY exhibited an excellent performance in lithium storage. All those indicating sp‐hybridized carbon‐based materials can exhibit great potential to possess excellent properties and be applied in the field of energy, electronic, and so on.
A 3D well‐defined porous material germanium‐carbdiyne (Ge‐CDY) comprised only with sp‐hybridized carbon atoms bridged by Ge atoms has been synthesized and investigated. The unique 3D diamond‐like Ge‐CDY delivers excellent stability, superior conductivity, low band gap, and sufficient ionic migration passageways, ensuring exceptional potential in photoelectric conversion and electronics, and so on. |
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ISSN: | 2575-0356 2575-0348 2575-0356 |
DOI: | 10.1002/eem2.12269 |