Investigation of maximum proton energy for qualified ground-based evaluation of single-event effects in SRAM devices

Existing standards show a clear discrepancy in the specification of the maximum proton energy for qualified ground-based evaluation of single-event effects, which can range from 180 to 500 MeV. This work finds that the threshold linear energy transfer of a tested device is a critical parameter for determining the maximum proton energy. The inner mechanisms are further revealed. High-energy deposition events (> 10 MeV) in sensitive volumes are attributed to the interaction between protons and the tungsten vias in the metallization layers.