Formulae for secondary electron yield from insulators and semiconductors
The processes and characteristics of secondary electron emission in insulators and semiconductors were studied, and the formulae for the maximum yield （6m） at Wpom 〈 800 eV and the secondary electron yield from insulators and semiconductors 6 at the primary incident energy of 2 keV ≤ Wpo ≤ 10 keV （δ...
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| Veröffentlicht in: | Nuclear science and techniques 2017-10, Vol.28 (10), p.9-14, Article 141 |
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| container_title | Nuclear science and techniques |
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| creator | Xie, Ai-Gen Lai, Min Chen, Yu-Lin Xia, Yu-Qing |
| description | The processes and characteristics of secondary electron emission in insulators and semiconductors were studied, and the formulae for the maximum yield （6m） at Wpom 〈 800 eV and the secondary electron yield from insulators and semiconductors 6 at the primary incident energy of 2 keV ≤ Wpo ≤ 10 keV （δ2-10） and 10 keV ≤Wpo ≤ 100 keV （δ10-100） were deduced. The calculation results were compared with their corresponding experimental data. It is concluded that the deduced for- mulae can be used to calculate δ2-100 at Wpom _〈 800 eV. |
| doi_str_mv | 10.1007/s41365-017-0291-y |
| format | Article |
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The calculation results were compared with their corresponding experimental data. It is concluded that the deduced for- mulae can be used to calculate δ2-100 at Wpom _〈 800 eV.</description><identifier>ISSN: 1001-8042</identifier><identifier>EISSN: 2210-3147</identifier><identifier>DOI: 10.1007/s41365-017-0291-y</identifier><language>eng</language><publisher>Singapore: Springer Singapore</publisher><subject>Energy ; Hadrons ; Heavy Ions ; Nuclear Energy ; Nuclear Physics ; 二次电子 ; 产额 ; 公式 ; 半导体 ; 次级电子 ; 电子发射特性 ; 绝缘体 ; 计算结果</subject><ispartof>Nuclear science and techniques, 2017-10, Vol.28 (10), p.9-14, Article 141</ispartof><rights>Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Chinese Nuclear Society, Science Press China and Springer Nature Singapore Pte Ltd. 2017</rights><rights>Copyright © Wanfang Data Co. Ltd. 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The calculation results were compared with their corresponding experimental data. It is concluded that the deduced for- mulae can be used to calculate δ2-100 at Wpom _〈 800 eV.</description><subject>Energy</subject><subject>Hadrons</subject><subject>Heavy Ions</subject><subject>Nuclear Energy</subject><subject>Nuclear Physics</subject><subject>二次电子</subject><subject>产额</subject><subject>公式</subject><subject>半导体</subject><subject>次级电子</subject><subject>电子发射特性</subject><subject>绝缘体</subject><subject>计算结果</subject><issn>1001-8042</issn><issn>2210-3147</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEURYMoWKs_wN3gwl305WvSWUqxVii40XVI89FOmUk0aZH592Zo0Z2rPMI57_IuQrcEHgiAfMycsFpgIBIDbQgeztCEUgKYES7P0aRABM-A00t0lfMOgPNaNBO0XMTUHzrtKh9TlZ2Jweo0VK5zZp9iqIbWdbbyKfZVG3Ih9zHlSgdb4L4d8YMZv67Rhddddjend4o-Fs_v8yVevb28zp9W2DBe73EtCOdi7dbCcCKNAEm0AK8daCst18YJZvU4e90AoYyuHVgxc5Yb7xvBpuj-uPdbB6_DRu3iIYWSqLa7rBwtDZRbgRaQHEGTYs7JefWZ2r7cpgiosTN17EwVQ42dqaE49OjkwoaNS3_b_5PuTkHbGDZfxftNqiUTktWzhv0AQaB8dw</recordid><startdate>20171001</startdate><enddate>20171001</enddate><creator>Xie, Ai-Gen</creator><creator>Lai, Min</creator><creator>Chen, Yu-Lin</creator><creator>Xia, Yu-Qing</creator><general>Springer Singapore</general><general>School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology,Nanjing 210044, China</general><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>2B.</scope><scope>4A8</scope><scope>92I</scope><scope>93N</scope><scope>PSX</scope><scope>TCJ</scope></search><sort><creationdate>20171001</creationdate><title>Formulae for secondary electron yield from insulators and semiconductors</title><author>Xie, Ai-Gen ; Lai, Min ; Chen, Yu-Lin ; Xia, Yu-Qing</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c346t-651445beb5c417c5071a50fae0ad7d4ace53daad7dfa901232be0d58ed4cff953</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Energy</topic><topic>Hadrons</topic><topic>Heavy Ions</topic><topic>Nuclear Energy</topic><topic>Nuclear Physics</topic><topic>二次电子</topic><topic>产额</topic><topic>公式</topic><topic>半导体</topic><topic>次级电子</topic><topic>电子发射特性</topic><topic>绝缘体</topic><topic>计算结果</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Xie, Ai-Gen</creatorcontrib><creatorcontrib>Lai, Min</creatorcontrib><creatorcontrib>Chen, Yu-Lin</creatorcontrib><creatorcontrib>Xia, Yu-Qing</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><collection>Wanfang Data Journals - Hong Kong</collection><collection>WANFANG Data Centre</collection><collection>Wanfang Data Journals</collection><collection>万方数据期刊 - 香港版</collection><collection>China Online Journals (COJ)</collection><collection>China Online Journals (COJ)</collection><jtitle>Nuclear science and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Xie, Ai-Gen</au><au>Lai, Min</au><au>Chen, Yu-Lin</au><au>Xia, Yu-Qing</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Formulae for secondary electron yield from insulators and semiconductors</atitle><jtitle>Nuclear science and techniques</jtitle><stitle>NUCL SCI TECH</stitle><addtitle>Nuclear Science and Techniques</addtitle><date>2017-10-01</date><risdate>2017</risdate><volume>28</volume><issue>10</issue><spage>9</spage><epage>14</epage><pages>9-14</pages><artnum>141</artnum><issn>1001-8042</issn><eissn>2210-3147</eissn><abstract>The processes and characteristics of secondary electron emission in insulators and semiconductors were studied, and the formulae for the maximum yield （6m） at Wpom 〈 800 eV and the secondary electron yield from insulators and semiconductors 6 at the primary incident energy of 2 keV ≤ Wpo ≤ 10 keV （δ2-10） and 10 keV ≤Wpo ≤ 100 keV （δ10-100） were deduced. 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| subjects | Energy Hadrons Heavy Ions Nuclear Energy Nuclear Physics 二次电子 产额 公式 半导体 次级电子 电子发射特性 绝缘体 计算结果 |
| title | Formulae for secondary electron yield from insulators and semiconductors |
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