Formulae for secondary electron yield from insulators and semiconductors
The processes and characteristics of secondary electron emission in insulators and semiconductors were studied, and the formulae for the maximum yield (6m) at Wpom 〈 800 eV and the secondary electron yield from insulators and semiconductors 6 at the primary incident energy of 2 keV ≤ Wpo ≤ 10 keV (δ...
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Veröffentlicht in: | Nuclear science and techniques 2017-10, Vol.28 (10), p.9-14, Article 141 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | The processes and characteristics of secondary electron emission in insulators and semiconductors were studied, and the formulae for the maximum yield (6m) at Wpom 〈 800 eV and the secondary electron yield from insulators and semiconductors 6 at the primary incident energy of 2 keV ≤ Wpo ≤ 10 keV (δ2-10) and 10 keV ≤Wpo ≤ 100 keV (δ10-100) were deduced. The calculation results were compared with their corresponding experimental data. It is concluded that the deduced for- mulae can be used to calculate δ2-100 at Wpom _〈 800 eV. |
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ISSN: | 1001-8042 2210-3147 |
DOI: | 10.1007/s41365-017-0291-y |