Instrumentation and application of the ion beam analysis line of the in situ ion beam system

An ion beam analysis system was established on a 1.7 MV tandem accelerator, enabling Rutherford backscat- tering （RBS）, elastic recoil detection （ERD）, nuclear reaction analysis （NRA） and channeling measurements. The system was tested by performing qualitative and quantitative analysis of Si, Ni/Si, BiFeO3 ：La/Si, MoC/Mo/Si and TiBN/Si samples. RBS of a BiFeO3：La film was used as system calibration. Tested by ion beam channeling, a Si（100） is of good crystallinity （Xmin = 3.01%）. For thin film samples, the measured thick- ness agrees well with simulation results by SIMNRA. In particular, composition of a MoC/Mo/Si and TiBN film samples were analyzed by RBS and non-Rutherford elastic backscattering.