Demonstration of Pm-147 GaN betavoltaic cells

Two GaN p-（i）-n diodes were designed and fabricated, and their electrical performances with 63Ni and 147pm plate sources were compared. The results showed that the diodes with 147Pm had better electrical performances, with a short-circuit current （Isc） of 59 nA, an open-circuit voltage （Voc） of 1.4 V, and a maximum power （Pmax） of 49.4nw. The ways to improve the electrical performances are discussed, including appropriate increase of the i-GaN thickness.