AN IMPROVED AGING-PREDICT SCHEME BASED ON SYMMETRICAL NOR GATE

AN IMPROVED AGING-PREDICT SCHEME BASED ON SYMMETRICAL NOR GATE

Transistor aging has become the most important factor affecting the integrated circuit reliability. There is detection error caused by stacking effect in the stability checker in the previous respective aging sensors. An improved prediction aging sensor scheme is proposed using symmetrical NOR gate....

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Veröffentlicht in:Journal of electronics (China) 2013, Vol.30 (5), p.509-516
Hauptverfasser: Xu, Hui, Liang, Huaguo, Huang, Zhengfeng, Chang, Hao
Format: Artikel
Sprache:eng
Schlagworte:
Electrical Engineering
Engineering
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Zusammenfassung:Transistor aging has become the most important factor affecting the integrated circuit reliability. There is detection error caused by stacking effect in the stability checker in the previous respective aging sensors. An improved prediction aging sensor scheme is proposed using symmetrical NOR gate. Simulation experiments show the improved method eliminates prediction error caused by stacking effect. Layout area overhead is 4.65% and 7.06% compared to two respective sensor structures.
ISSN:0217-9822
1993-0615
DOI:10.1007/s11767-013-0076-3