Effect of Co Ion Implantation on GMR of [NiFeCo(10 nm)/Ag(10 nm)] ×20Multilayer Film

TB6; The composition, phase structure and microstructure of the discontinuous multilayer film [NiFeCo(10 nm)/Ag(10 nm)]×20 were investigated after Co ion implantation and annealing at 280, 320, 360 and 400℃, respectively.GMR (giant magnetoresistance) ratio of the film with/without Co ion implantation was measured. The results showed that Co ion implantation decreased the granule size of the annealed multilayer film, and increased Hc value and GM R ratio of the multilayer film. After annealing at 360℃, the multilayer film [NiFeCo(10 nm)/Ag(10 nm)] ×20with/without Co ion implantation both exhibited the highest GMR ratio of 12.4%/11% under 79.6 kA/m of applied saturation magnetic field.