A landscape of β-Ga2O3 Schottky power diodes

β-Ga2O3 Schottky barrier diodes have undergone rapid progress in research and development for power electronic applications. This paper reviews state-of-the-art β-Ga2O3 rectifier technologies, including advanced diode architectures that have enabled lower reverse leakage current via the reduced-surface-field effect. Characteristic device properties including on-resistance, breakdown voltage, rectification ratio, dynamic switching, and nonideal effects are summarized for the different devices. Notable results on the high-temperature resilience of β-Ga2O3 Schottky diodes, together with the enabling thermal pack-aging solutions, are also presented.